IRFB59N10D

IRFB59N10D



Производитель:

International Rectifier
Описание:
 MOSFET N-CH 100V 59A TO-220AB
Категория:
 Discrete Semiconductor Products
Корпус:
 TO-220
Год:
 03+

Datasheet (Техническое описание) IRFB59N10D

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationIRFB59N10D
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C59A
Rds On (Max) @ Id, Vgs25 mOhm @ 35.4A, 10A
Input Capacitance (Ciss) @ Vds 2450pF @ 25V
Power - Max3.8W
PackagingBulk
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFB59N10D
IRFB59N10D


 
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