EMD22T2R

EMD22T2R



Производитель:

Rohm Semiconductor
Описание:
 TRANS PRE-BIASED 50V 100MA EMT6
Категория:
 Discrete Semiconductor Products
Корпус:
 EMT6
Год:
 2006

Datasheet (Техническое описание) EMD22T2R

Поиск в бесплатном архиве даташитов datasheet.su


Посмотреть все характеристики
Technical/Catalog InformationEMD22T2R
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)47K
Vce Saturation (Max) @ Ib, Ic300mV @ 250??A, 5mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz
Mounting TypeSurface Mount
Package / CaseEMT6
PackagingTape & Reel (TR)
Drawing Number*
Other Names EMD22T2R
EMD22T2R


 
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